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MUR1620ISC Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # MUR1620ISC
Description  16.0 Ampere Heatsink Electrically Isolated Series Connection Ultra Fast Recovery Rectifiers
PDF  2 Pages
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

MUR1620ISC Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  MUR1620ISC Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. MUR1620ISC Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
TO-220AB/TO-220-3L
Unit:inch(mm)
※
ThinkiSemi latest&matured process FRED
※
Low forward voltage drop
※
High current capability
※
Low reverse leakage current
※
Low reverse leakage current
※
High surge current capability
Application
※
Automotive Inverters and Solar Inverters
※
Car Audio Amplifiers and Sound Device Systems
※
Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※
Case: Heatsink open metal TO-220AB/TO-220-3L package
※
Epoxy: UL 94V-0rateflame retardant
※
Epoxy: UL 94V 0 rate flame retardant
※
Terminals: Solderable per MIL-STD-202 method 208
※
Polarity: As marked on diode body
※
Mounting position: Any
※
Weight: 2.0 gram approximately
MUR1620ISC thru MUR16120ISC
Pb Free Plating Product
MUR1620ISC thru MUR16120ISC
Pb
16.0 Ampere Heatsink Electrically Isolated Series Connection Ultra Fast Recovery Rectifiers
Positive
Negative
Insulated Common Cathode
Insulated Common Anode
Doubler
Insulated Doubler Polarity
Series
Insulated Series Connection
Suffix "ICA"
Suffix "IDP"
Suffix "ISC"
Suffix "ICC"
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.14T
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
VRRM
200
400
600
800
1000
1200
V
VRMS
140
280
420
560
700
840
V
VDC
200
400
600
800
1000
1200
V
IF(AV)
A
IFSM
A
VF
(Typical)
0.85-0.95
1.00-1.25
1.25-1.50
V
IR
μA
μA
Trr
nS
CJ
pF
RθJC
℃
/W
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Typical Junction Capacitance (Note 2)
80
Typical Thermal Resistance (Note 3)
1.5
Operating Junction and Storage
Temperature Range
-55 to +175
Maximum Reverse Recovery Time (Note1)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125℃
(Total Device 2x8.0A=16.0A)
16.0
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
160
Maximum Instantaneous Forward Voltage
@8.0A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
1.50-1.70
25-50
50-75
MUR1620ISC
MUR1640ISC
MUR1660ISC
MUR1680ISC
MUR16100ISC
MUR16120ISC
※
Internal ceramic(alumina) insulated package
Heat-sink(copper base plate)
N/C(None Collect)


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