SCS15120 datasheet(2/5 Pages) GWSEMI

Part #	SCS15120

Description	1200V/15A SiC Schottky Barrier Diode

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	GWSEMI [Goodwork Semiconductor Co., Ltd .]

Direct Link	http://www.goodwork.com.tw/

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Thermal characteristics

Symbol

Parameter

Typ.

Max.

Units

Rth (JC)

Thermal resistance, junction-case

0.67

1.00

°C /W

Rth (JA)

Thermal resistance, junction-ambient

°C /W

Tsold

Soldering temperature

260

°C

SCS15120

Electrical Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Test Condition

VDC

DC blocking voltage

1200

Tj = 25 °C, IR= 75μA

Forward voltage

1.40

1.80

1.90

1.60

IF = 15 A, Tj = 25 °C

IF = 15 A, Tj = 150 °C

IF = 15 A, Tj = 175 °C

Reverse current

7.50

30.00

56.20

75.0

μA

VR = 1200 V, Tj= 25 °C

VR = 1200 V, Tj= 150 °C

VR = 1200 V, Tj= 175 °C

Total capacitive charge

VR = 800 V, Tj = 25 °C,

Qc=

C(V)dV

Total capacitance

930

VR = 1V, f = 1MHz, Tj= 25°C

VR = 800V, f = 1MHz, Tj= 25°C

VR = 1200 V, f = 1MHz, Tj= 25°C

Capacitance Stored Energy

μJ

VR = 800V

∫

SCS15120 Datasheet(PDF) 2 Page - Goodwork Semiconductor Co., Ltd .

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