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PNP Transistor Bare Die – 2N6107

Absolute Maximum Ratings T

A = 25°C unless otherwise stated

Rev 1.0

19/04/24

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

70

V

Emitter-Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

7

A

Base Current

IB

3

A

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-65 to 150

°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Electrical Characteristics T

A = 25°C unless otherwise stated

V(BR)CBO

IE = 0

80

-

-

V

Collector-Emitter Sustaining Voltage

1

VCEO(SUS)

IB = 0, IC = 100mA

70

-

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IC = 0

5

-

-

V

ICEO

VCE = 60V, IB = 0

-

-

1.0

mA

ICEX

VCE = 80V, VBE(off) = 1.5V

-

-

0.1

mA

Collector Cut-off Current

ICEX

2

VCE =70V,VBE(off) =1.5V,TJ= 125°C

-

-

2.0

mA

Emitter Cut-off Current

IEBO

VEB = 5V, IC = 0

-

-

1.0

mA

ON CHARACTERISTICS

IC = 2A, VCE = 4V

30

-

150

-

Forward-Current Transfer Ratio

1

hFE

IC = 7A, VCE = 4V

2.3

-

-

-

Collector-Emitter Saturation Voltage

1

VCE(sat)

IC = 7A, IB = 3A

-

-

3.5

V

Base-Emitter On Voltage

1

VBE(on)

IC = 7A, VCE = 4V

-

-

3.0

V

SMALL SIGNAL CHARACTERISTICS

2

Transition Frequency

3

fT

VCE = 4V, IC = 0.5A, f = 1MHz

10

-

-

MHz

Small-Signal Current Gain

hfe

VCE = 4V, IC = 0.5A, f = 50kHz

20

-

-

-

1. Pulsed duration = 300µs, duty cycle ≤ 2%

2. Not production testing in die form, characterized by chip design and package verification

3. fT = | hfe | ◦ fTEST

DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With

respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon

Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind.

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