Analog Power

AM4356N

N-Channel 150-V (D-S) MOSFET

VDS (V)

ID (A)

5.7

5.1

Symbol

Limit

Units

VDS

150

VGS

±20

TA=25°C

5.7

TA=70°C

4.8

IDM

25

IS

6.6

A

TA=25°C

3.1

TA=70°C

2.2

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

40

80

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

Gate-Source Voltage

PRODUCT SUMMARY

150

rDS(on) (mΩ)

65 @ VGS = 10V

80 @ VGS = 6.5V

Power Dissipation

a

t <= 10 sec

Steady State

RθJA

ID

A

PD

W

Continuous Drain Current

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• PoE PSE and PD Circuits

• LED Inverter Circuits

• 48V-Input DC/DC Conversion Circuits

SO-8

© Preliminary

1

Publication Order Number:

DS_AM4356N_1A