 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IXTN210P10T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXTN210P10T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 3 page  ISFM1146 eq IXTN210P10T P-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= -210A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · DC Choppers · Automatic Test Equipment · Battery Charger Applications Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ± 15 V ID Drain Current-Continuous -210 A IDM Drain Current-Single Pulse -800 A PD Total Dissipation @TC=25℃ 830 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.15 ℃ /W |
Similar Part No. - IXTN210P10T |
|
Similar Description - IXTN210P10T |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
