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MJ4035 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ4035
Description  Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ4035 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Darlington Power Transistor
MJ4035
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
DC Current Gain-
: hFE= 1000(Min)@ IC= 10A
·
Fast switching speed
APPLICATIONS
·
Switching
·
Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
PC
Total Power Dissipation
@ TC=25℃
150
W
TJ
Max.Junction Temperature
-65~200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.17
℃
/W


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