Version 1.2

Date: 2023-04-20

- 4 -

MEMS Microphone IC

3SM123C4T1VA-R

WWW.3SYSTEM.COM.TW

Acoustical and Electrical Characteristics

Table 3 Typical test conditions are TA = 23 °C, VDD = 2.1 V and R.H. = 50 % measured in a

pressure chamber test setup. All voltages refer to GND node

Parameters

Symbol Min. Typ. Max.

Unit

Test Conditions

Acoustic

Sensitivity

S

-43

-42

-41 dBV/Pa 1KHz, 94dBSPL

Signal to Noise Ratio

S/N

57

dBA

A-weighted

Equivalent Noise Level

ENL

37

dBA

A-weighted

Total Harmonic Distortion

THD

0.1

%

94dBSPL

1

%

110dBSPL

Acoustic Overload Point

AOP

123

dBSPL

10% THD@1KHz,

S = Typ.

Low Frequency Roll-off

LFRO

63

Hz

-3dB relative to 1KHz

Electrical

Supply Voltage

Vdd

1.6

3.6

V

Current Consumption

Isb

80

μA

Vdd=2.1V

80

μA

Vdd=3.6V

Power Supply Rejection

PSR+N

-93

dBV(A)

217Hz, 100 mV peak to

peak square wave on Vcc

2.1V

Power Supply Rejection Ratio

PSRR

63

dB

1KHz, 200 mV peak to

peak sine wave on Vcc

2.1V

Output Impedance

Zout

200

Ω

@1KHz

Output DC Offset

1.3

V

Directivity

Omnidirectional

Polarity

Increasing output voltage

Increasing sound pressure