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2SC5957 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5957
Description  Switching Regulator Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5957 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC5957
No.7613-2/4
02468
10
13579
IC -- VCE
IT05069
0
2
4
6
8
10
1
3
5
7
9
IB=0
700mA
600mA
500mA
400mA
300mA
200mA
100mA
800mA
900mA
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter ON-State Voltage, VBE(on) -- V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
1
3
4
5
6
8
7
IC -- VBE(on)
IT05153
VCE=5V
5
10
2
3
5
7
7
100
0.01
23
5
7 0.1
23
5
7 1.0
23
5
7 10
hFE -- IC
IT05155
VCE=5V
Ta=120°C
25°C
--40°
C
Collector Current, IC -- A
Collector Current, IC -- A
IT05156
0.01
23
5
7 0.1
23
5
7 1.0
23
5
7 10
2
0.01
0.1
2
2
3
3
5
7
1.0
3
5
7
VCE(sat) -- IC
IC / IB=5
Ta= --40°C
120
°C
25
°C
25
°C
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
hFE1VCE=5V, IC=1.2A
20*
50*
DC Current Gain
hFE2VCE=5V, IC=6A
10
hFE3VCE=5V, IC=1mA
10
Gain-Bandwidth Product
fT
VCE=10V, IC=1.2A
15
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
80
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=1.2A
0.8
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=1.2A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0
500
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0
7
V
Turn-ON Time
ton
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
0.5
µs
Storage Time
tstg
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
2.5
µs
Fall Time
tf
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
0.3
µs
* : The hFE1 of the 2SC5957 is classified as follows.
Rank
M
N
hFE
20 to 40
30 to 50
Switching Time Test Circuit
D.C.
≤1%
VR
RB
VCC=200V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
IB2



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