PJS6833 datasheet(1/6 Pages) PANJIT

Part #	PJS6833

Description	30V P-Channel Enhancement Mode MOSFET – ESD Protected

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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1 / 6 page

PJS6833

January 20,2022

PJS6833-REV.03

Page 1

30V P-Channel Enhancement Mode MOSFET

– ESD Protected

Voltage

-30 V

Current

-1.1A

SOT-23 6L

Unit: inch(mm)

Features

 RDS(ON) , VGS@-4,5V, ID@-1.1A<370m

Ω

 RDS(ON) , VGS@-2.5V, ID@-0.5A<540m

Ω

 RDS(ON) , VGS@-1.8V, ID@-0.1A<970m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.0141 grams

 Marking: SG3

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

+8

V

Continuous Drain Current

ID

-1.1

A

Pulsed Drain Current(Note 4)

IDM

-4.4

A

Power Dissipation

Ta=25oC

PD

1.25

W

Derate above 25oC

10

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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