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ISCF6N90C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF6N90C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCF6N90C DESCRIPTION · Drain Current ID= 6A@ TC=25℃ · Drain Source Voltage- : VDSS=900V(Min) · Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max) · 100% Avalanche Tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High current , high speed switching · Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 6 A IDM Pulse Drain Current 24 A PD Power Dissipation @TC=25℃ 56 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to case 2.25 ℃ /W |
Similar Part No. - ISCF6N90C |
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Similar Description - ISCF6N90C |
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