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MD1803DFX Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MD1803DFX Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon NPN Power Transistor MD1803DFX www.iscsemi.com 1 DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 700V (Min) APPLICATIONS · Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PD Total dissipation at TC=25℃ 57 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.2 ℃ /W |
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