MJD13003 datasheet(1/3 Pages) ISC

Part #	MJD13003

Description	Silicon NPN Power Transistor

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD13003

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 400V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= 1.0V(Max) @IC= 1A

APPLICATIONS

· Designed for use in high-voltage, high-speed, power swit-

ching in inductive circuit, they are particularly suited for

115 and 220V switchmode applications such as switching

regulators, inverters, DC-DC converter, Motor control,

Solenoid/Relay drivers and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

1.5

A

ICM

Collector Current-peak

3.0

A

IB

Base Current

0.75

A

IBM

Base Current-Peak

1.5

A

PC

Collector Power Dissipation

TC=25℃

40

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃

/W

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