MJD210 datasheet(2/3 Pages) ISC

2 / 3 page

Silicon PNP Power Transistor

MJD210

www.iscsemi.com

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -10mA; IB= 0

-25

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -0.5 A ;IB= -50mA

-0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -2A ;IB= -0.2A

-0.75

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= -5A ;IB= -1A

-1.8

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A ;IB= -1A

-2.5

VBE(on)

Base-Emitter On Voltage

IC= -2A; VCE= -1V

-1.6

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

VCB= -40V; IE= 0;TC= 125℃

-0.1

IEBO

Emitter Cutoff Current

VEB= -8V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -0.5 A ; VCE= -1V

hFE-2

DC Current Gain

IC= -2A ; VCE= -1V

180

hFE-3

DC Current Gain

IC= -5A ; VCE= -2V

Current-Gain—Bandwidth Product

IC= -0.1 A; VCE= -10V;

ftest = 10MHz

MHz

COB

Collector Capacitance

IE= 0; VCB= -10V; ftest = 0.1MHz

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