STB45N65M5 datasheet(2/3 Pages) ISC

2 / 3 page

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc N-Channel MOSFET Transistor

STB45N65M5

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBO

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 1.0mA

650

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 0.25mA

3.0

5.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 17.5A

mΩ

IGSS

Gate-Body Leakage Current

VGS= ±25V;VDS= 0

0.1

IDSS

Zero Gate Voltage Drain Current

VDS= 650V; VGS= 0

1.0

Ciss

Input Capacitance

VGS = 0V,

VDS = 100V,

f = 1.0MHz

3498

Coss

Output Capacitance

121

Crss

Reverse Transfer Capacitance

Gate resistance

f = 1.0MHz open drain

Total Gate Charge

VDD = 520V,

ID = 17.5A,

VGS = 10V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(on)

Turn-on Delay Time

VDD = 400V,

ID = 23A,

RG = 4.7Ω

Turn-on Rise Time

td(off)

Turn-off Delay Time

Turn-off Fall Time

Drain - Source Body Diode Characteristics

ISD

Continuous Source Current

Tc = 25 ºC

ISM

Pulsed Source Current

140

VSD

Diode Forward Voltage

ISD= 35A; VGS= 0V

1.5

trr

Reverse Recovery Time

VDD = 100V,IF = 35A,

diF/dt = 100A /μs

400

Qrr

Reverse Recovery Charge

9.5

STB45N65M5 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

STB45N65M5 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Datasheet Download

Link URL