Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
0.330 (8.38)
0.320 (8.13)
0.365 (9.27)
0.355 (9.02)
0.164 (4.17)
0.186 (4.72)
0.200 (5.08)
0.030 (0.76) nom
1.000 (25.4) min
CATHODE (long lead)
Case 12
CLD156
Large Active Area
Silicon Planar photodiode
Clairex
Technologies, Inc.
May, 2001
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
features
• 100° acceptance angle
• 860nm peak response
• TO-5 hermetic package
• usable for visible through near-IR
• RoHS compliant
description
The CLD156 and CLD156R are
0.122" x 0.222" active area silicon
photodiodes featuring high linearity
and low dark current. The TO-5
header provides thermal
environment for reliable operation
over a wide temperature range. Wide
acceptance angle permits use in IR
air communications, ambient light
detection, safety and monitoring,
security systems, etc. For additional
information, call Clairex.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature........................................................................-65°C to +150°C
operating temperature.....................................................................-65°C to +150°C
lead soldering temperature
(1) .............................................................................260°
reverse voltage ...................................................................................................30V
continuous power dissipation
(2) .....................................................................200mW
notes:
1.
0.06” (1.5mm) from the header for 5 seconds maximum.
2.
Derate linearly 1.28mW/°C free air temperature to TA = +150°C.
®
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
ISC
Short-circuit current(3)
-
100
-
µA
VBIAS = 0V, Ee = 5mW/cm
2
-
-
50
nA
VF = 100mV, Ee = 0
ID
Dark current
-
-
50
nA
VR = 15V, Ee = 0
VO
Open circuit voltage
(3)
-
0.35
-
V
Ee = 5mW/cm
2
VBR
Reverse breakdown
25
-
-
V
IR = 100µA
CJ
Junction capacitance
-
-
400
pF
VBIAS = 0V, f = 1MHz
tr, tf
Output rise and fall time
(4)
-
-
10
µs
RL = 1kΩ
ΘHP
Total angle at half sensitivity points
-
100
-
deg.
notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4.
Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm
2.
Revised 3/15/06
This product is tested to satisfy the
conditions of both the CLD156 and
the CLD156R.
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