TECHNICAL DATA

DATA SHEET D0076 REV. -

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

1C5820

1C5821

1C5822

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

Applications:

 Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

Features:



Soft Reverse Recovery at Low and High Temperature



Very Low Forward Voltage Drop



Low Power Loss, High Efficiency



High Surge Capacity



Guard Ring for Enhanced Durability and Long Term Reliability



Guaranteed Reverse Avalanche Characteristics



Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Inverse Voltage

1C5820

1C5821

1C5822

VRWM

-

20

30

40

V

Average Forward Current

IF(AV)

50% duty cycle, rectangular

wave form

3

A

Surge Peak Forward Current

IFSM

tp = 8.3 ms, Half Sine Wave

80

A

Thermal Impedance

ZθJX

-

2.5

C/W

Junction Temperature

TJ

-

-55 to+125

C

Storage Temperature

Tstg

-

-55 to+150

C

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Forward Voltage Drop 1C5820

1C5821

1C5822

1C5820

1C5821

1C5822

1C5820

1C5821

1C5822

VF1

@ 1A, Pulse, TJ = 25 C

0.36

0.37

0.38

V

VF2

@ 3A, Pulse, TJ = 25 C

0.46

0.48

0.50

V

VF3

@ 9.4A, Pulse, TJ = 25 C

0.65

0.67

0.70

V

Reverse Current

IR

@VRRM , TJ = 25 C

1.5

mA

Junction Capacitance

CT

@VR = 5V, TC = 25 C

fSIG = 1MHz,

VSIG = 50mV (p-p)

265

pF