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2SA1241-252 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1241-252 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA1241 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA,IC=0 -5 -- -- V V (BR)CEO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 -50 -- -- V V(BR)CBO Collector-Base Breakdown Voltage IC=-1mA ,IE=0 -50 -- -- V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA -- -- -0.5 V VBE(sat) Base-emitter saturation voltage IC= -1A; IB= -50mA -- -- -1.2 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -- -- -1.0 μ A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -- -- -1.0 μ A hFE DC Current Gain IC= -0.5A; VCE= -2V 70 -- 240 hFE DC Current Gain IC= -1.5A; VCE= -2V 40 -- -- fT Transition frequency VCE=-2V ,IC=-0.5A 100 MHz Cob Collector output capacitance VCB=-10V ,IE=0,f=1MHz 40 pF NOTE:Pulse test hFE Classifications O Y 70-140 120-240 |
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