MJD117 datasheet(1/2 Pages) ISC

Part #	MJD117

Description	Silicon PNP Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

MJD117

www.iscsemi.com

1

DESCRIPTION

·

High DC current gain

·

Lead formed for surface mount applications

·

Built-in a damper diode at E-C

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general purpose amplifier

and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

ICP

Collector Current-Pulse

-4

A

PC

Collector Power Dissipation

Ta=25℃

1.75

W

PC

Collector Power Dissipation

TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃

/W

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