MJD41C datasheet(1/2 Pages) ISC

Part #	MJD41C

Description	Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD41C

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= 1.5V(Max) @IC= 6A

·

Complement to Type MJD42C

APPLICATIONS

· Designed for low power audio amplifier and low-current,

high-speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

Base Current

2

A

PC

Collector Power Dissipation

TC=25℃

20

W

Collector Power Dissipation

Ta=25℃

1.75

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃

/W

Rth j-a

Thermal Resistance,Junction to

Ambient

71.4

℃

/W

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MJD41C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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