NTMFS4833N datasheet(1/7 Pages) ONSEMI

Part #	NTMFS4833N

Description	Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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November, 2006 − Rev. 2

1

Publication Order Number:

NTMFS4833N/D

NTMFS4833N

Power MOSFET

30 V, 191 A, Single N−Channel, SO−8 FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices*

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

26

A

TA = 85°C

19

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.35

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

16

A

TA = 85°C

12

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.91

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

191

A

TC = 85°C

138

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

125

W

Pulsed Drain

Current

TA = 25°C,

tp = 10 ms

IDM

288

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

104

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,

IL = 35 Apk, L = 1.0 mH, RG = 25 W)

EAS

612.5

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

2.0 m

W @ 10 V

191 A

3.0 m

W @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4833NT1G

SO−8 FL

(Pb−Free)

1500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NTMFS4833NT3G

SO−8 FL

(Pb−Free)

5000/Tape & Reel

4833N

AYWW

G

S

G

D

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