1998 Apr 01

2

Philips Semiconductors

Preliminary specification

Dual P-channel enhancement

mode MOS transistor

PHP222

FEATURES

• Very low on-state resistance

• High-speed switching

• No secondary breakdown

• Low threshold.

APPLICATIONS

• Power management

• DC-DC converters

• General purpose switch.

DESCRIPTION

Two P-channel enhancement mode MOS transistors in an

8-pin SOT96-1 (SO8) SMD plastic package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT96-1 (SO8)

PIN

SYMBOL

DESCRIPTION

source 1

gate 1

source 2

gate 2

drain 2

drain 2

drain 1

drain 1

Fig.1 Simplified outline and symbol.

handbook, halfpage

d

MAM119

1

4

5

8

g

s

d

1

1

1

1

d

g

s

d

2

2

2

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−−30

V

source-drain diode forward voltage

−−1.3

V

gate-source voltage (DC)

open drain

−±8V

gate-source threshold voltage

−0.4

−

V

drain current (DC)

−−3.2

A

drain-source on-state resistance

−

220

m

Ω

total power dissipation

−

3.5

W