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KTA1042D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # KTA1042D
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KTA1042D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  KTA1042D Datasheet HTML 1Page - Inchange Semiconductor Company Limited KTA1042D Datasheet HTML 2Page - Inchange Semiconductor Company Limited KTA1042D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
KTA1042D
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO *
Collector-Emitter Breakdown Voltage
IC= -50mA; IB= 0
-100
--
--
V
V(BR)CBO *
Collector-Base Breakdown Voltage
IC= -1mA; IB= 0
-100
--
--
V
V(BR)EBO *
Emitter-Base Breakdown Voltage
IC= -1mA; IB= 0
-5
--
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-4A; IB= -400mA
--
--
-2.0
V
VBE(on)
Base-Emitter voltage
IC=- 4A; VCE= -5V
--
--
-1.5
V
ICEO
Collector Cutoff Current
VCE=- 100V; IE= 0
--
--
-100
uA
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
--
--
-1
mA
hFE1
DC Current Gain
IC= -1A; VCE= -5V
70
--
240
hFE2
DC Current Gain
IC=- 4A; VCE= -5V
20
--
--
fT
Current-Gain—Bandwidth Product
IC=- 1A; VCE= -5V
--
30
--
MHz
COB
Output Capacitance
IE=0;
VCB= -10V; f= 1.0MHz
--
270
--
pF
V(BR)CEO *
Collector-Emitter Breakdown Voltage
IC= -50mA; IB= 0
-100
--
--
V
hFE1 Classifications
O
Y
70-140
120-240



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