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KTC2025D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KTC2025D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor KTC2025D www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CBO Collector-Base Sustaining Voltage IC= 10uA; IE= 0 120 -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 120 -- V V(BR)EBO Emitter-base Breakdown Voltage IE=10uA, IC=0 5 -- V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A -- 0.4 V VBE(sat) Base-Emitter Voltage IC= 0.5A; IB= 0.05A -- 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 -- 1 uA ICEO Collector Cut-off Current VCE= 120V; IB= 0 -- 1 uA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 -- 1 uA hFE-1 DC Current Gain IC= 50mA ; VCE= 5V 100 320 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 20 -- hFE1 Classifications Y GR 100-200 160-320 |
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