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STFV4N150 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STFV4N150
Description  N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFV4N150 Datasheet(HTML) 1 Page - STMicroelectronics

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March 2007
Rev 4
1/13
13
STFV4N150
N-channel 1500V - 5
Ω - 4A - TO-220FH
Very high voltage PowerMESH™ Power MOSFET
General features
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Fully plastic TO-220 package
■ Creepage distance path is > 4mm
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics. The creepage path is
what makes this package unique from TO-220FP.
The creepage distance path between each lead
and between the leads and the heatsink has been
increased to >4.0mm, making this package met
all stringent safety norms in high voltage
applications.
Applications
■ Switching application
Internal schematic diagram
Type
VDSS
RDS(on)
ID
Pw
STFV4N150
1500V
<7
Ω
4A
40W
1
2
3
TO-220FH
www.st.com
Order codes
Part number
Marking
Package
Packaging
STFV4N150
FV4N150
TO-220FH
Tube


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