Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 6 of 11 May 2007 ver 1

AP602

High Dynamic Range 4W 28V HBT Amplifier

2010-2025 MHz Application Circuit

Typical Performance at 25

°C at an

output power of +27 dBm

Frequency

2015 MHz

Total Output Power

+27 dBm

Power Gain

13.7 dB

Input Return Loss

12 dB

Output Return Loss

8.5 dB

IMD3 @ +27 dBm PEP

-44 dBc

Operating Current, Icc

110 mA

Collector Efficiency

16.5 %

Output P1dB

+36 dBm

Quiescent Current, Icq

80 mA

Vpd, Vbias

+5 V

Vcc

+28 V

Notes:

1. The primary RF microstrip line is 50

Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. The center of L3 is placed at 0.095” (8.3

° @ 2015 MHz) from the center of C2.

4. The center of C2 is placed at 0.135” (11.8

° @ 2015 MHz) from the edge of the AP602 (U1).

5. The center of C30 is placed at 0.530” (50.9

° @ 2015 MHz) from the edge of the AP602 (U1).

6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.

7. The main RF trace is cut at component location L3 for this particular reference design.

2010-2025 MHz Application Circuit Performance Plots

Gain vs. Output Power vs. Temperature

CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz

10

11

12

13

14

15

28

30

32

34

36

38

Output Power (dBm)

-40 ˚C

25 ˚C

85 ˚C

S11, S22 vs. Frequency

Vcc = 28V, Icq = 80 mA, 25 ˚C

-25

-20

-15

-10

-5

0

1.96

1.98

2

2.02

2.04

2.06

2.08

Frequency (GHz)

S11

S22

Efficiency vs. Output Power vs. Temperature

CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz

0

10

20

30

40

50

20

24

28

32

36

Output Power (dBm)

-40 ˚C

25 ˚C

85 ˚C

ACLR vs. Output Power vs. Icq

3-carrier TDSCDMA, Vcc = 28V, 2015MHz

-56

-52

-48

-44

-40

16

18

20

22

24

26

Average Output Power (dBm)

Icq = 80mA

Icq=100mA

3C-TDSCDMA, PAR = 9.6 dB

@0.01% prob, BW = 1.28MHz,

Sample clk = 32 MHz

IQ Mod Filter = 2.1 MHz

Efficiency vs. Output Power

3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz

0

2

4

6

8

10

16

18

20

22

24

26

Average Output Power (dBm)

IMD vs. Output Power

CW 2-tone signal, 2015 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C

-80

-70

-60

-50

-40

22

24

26

28

30

32

Output Power, PEP (dBm)

IMD3L

IMD3U

IMD5

Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com

C7

1000pF

C30

2.4pF

See note 5

C2

2.7pF

See note 4

4.7 nH

See note 3

L3

C7

100pF

W = .030”

L = .980”

C27

10pF

1000pF