RθJA

Thermal Resistance Junction-Ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.063

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=15A

---

22

m

26

Ω

VGS=4.5V , ID=10A

---

30

38

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

---

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.24

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

---

17

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

3.2

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=48V , VGS=4.5V , ID=12A

---

12.6

---

nC

Qgs

Gate-Source Charge

---

3.2

---

Qgd

Gate-Drain Charge

---

6.3

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V ,

RG=3.3 ,

ID=10A

---

8

---

ns

Tr

Rise Time

---

14.2

---

Td(off)

Turn-Off Delay Time

---

24.4

---

Tf

Fall Time

---

4.6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1378

---

pF

Coss

Output Capacitance

---

86

---

Crss

Reverse Transfer Capacitance

---

64

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

23

A

ISM

Pulsed Source Current2,5

---

---

46

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A

4.The power dissipation is limited by 150

℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power

dissipation.

IRFR024

N-Channel Enhancement Mode MOSFET

2

Rev:2023A2