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IRLML2502 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRLML2502
Description  SOT-23 Plastic-Encapsulate MOSFETS
PDF  4 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRLML2502 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =10µA
20
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =50µA
0.65
1.2
V
Gate-body leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =20V, VGS =0V
1
µA
VGS =4.5V, ID =4.2A
0.035
0.045
Drain-source on-resistance
a
rDS(on)
VGS =2.5V, ID =3.6A
0.050
0.080
Ω
Forward transconductance
a
gfs
VDS =5V, ID =3.6A
8
S
Diode forward voltage
VSD
IS=0.94A,VGS=0V
0.76
1.2
V
Dynamic
Total gate charge
Qg
4.0
10
Gate-source charge
Qgs
0.65
Gate-drain charge
Qgd
VDS =10V,VGS =4.5V,ID =3.6A
1.5
nC
Input capacitance
b
Ciss
300
Output capacitance
b
Coss
120
Reverse transfer capacitance
b
Crss
VDS =10V,VGS =0V,f=1MHz
80
pF
Switching
b
Turn-on delay time
td(on)
7
15
Rise time
tr
55
80
Turn-off delay time
td(off)
16
60
Fall time
tf
VDD=10V,
RL=5.5Ω, ID ≈3.6A,
VGEN=4.5V,Rg=6Ω
10
25
ns
Notes :
a.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b.
These parameters have no way to verify.
a
T =25
℃ unless otherwise specified
Rev:2023A2
Rev:2023A2
2
SOT-23 Plastic-Encapsulate MOSFETS
IRLML2502
IRLML2502
IRLML2502



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