PMBF5486 datasheet(3/10 Pages) PHILIPS

3 / 10 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel ﬁeld-effect transistors

PMBF5484; PMBF5485;

PMBF5486

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL RESISTANCE

Note

1. Device mounted on an FR4 printed-circuit board.

STATIC CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

VGSO

gate-source voltage

−−25

VGDO

gate-drain voltage

−−25

DC forward gate current

−

Ptot

total power dissipation

up to Tamb = 25 °C (note 1)

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-a

from junction to ambient (note 1)

500 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)GSS

gate-source breakdown voltage

VDS = 0; IG = −1 µA

−25

−

IDSS

drain current

VDS = 15 V; VGS = 0

PMBF5484

PMBF5485

PMBF5486

IGSS

reverse gate leakage current

VDS = 0; VGS = −15 V

−−1nA

VGSS

gate-source forward voltage

VDS = 0; IG = 1 mA

−

VGS(off)

gate-source cut-off voltage

VDS = 15 V; ID = 1 nA

PMBF5484

−0.3

−3V

PMBF5485

−0.5

−4V

PMBF5486

−2

−6V

 Y

fs 

common source transfer admittance

VDS = 15 V; VGS = 0

PMBF5484

PMBF5485

3.5

PMBF5486

 Y

os 

common source output admittance

VDS = 15 V; VGS = 0

PMBF5484

−

µS

PMBF5485

−

µS

PMBF5486

−

µS

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