NE685M13 datasheet(2/9 Pages) CEL

2 / 9 page

3-156

Notes:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy

PCB.

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

9.0

VCEO

Collector to Emitter Voltage

6.0

VEBO

Emitter to Base Voltage

2.0

Collector Current

PT2

Total Power Dissipation

140

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

NE685M13

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Collector to Base Voltage, VCB (V)

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

Mounted on Glass Epoxy PCB

(1.08 cm

X 1.0 mm (t) )

300

250

200

150

140

100

125

150

f = 1 MHz

0.6

0.5

0.4

0.3

0.2

0.1

Ambient Temperature, TA (ºC)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

VCE = 3 V

0.4

0.2

0.6

0.8

1.0

Base to Emitter Voltage, TBE (V)

COLLECTOR CURRENT VS.

BASE TO EMITTER VOLTAGE

IB = 30 A

60 A

90 A

120 A

150 A

180 A

210 A

240 A

270 A

300 A

Collector to Emitter Voltage, VCE (V)

COLLECTOR CURRENT VS.

COLLECTOR TO EMITTER VOLTAGE

PART NUMBER

QUANTITY

NE685M13-T3-A

3k pcs./reel

ORDERING INFORMATION

NE685M13 Datasheet(PDF) 2 Page - California Eastern Labs

NE685M13 Datasheet(HTML) 2 Page - California Eastern Labs

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL