PMBFJ113 datasheet(3/6 Pages) PHILIPS

3 / 6 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel junction FETs

PMBFJ111;

PMBFJ112; PMBFJ113

THERMAL CHARACTERISTICS

Tj =P(Rth j-t + Rth t−s + Rth s-a) + Tamb

Notes

1. Mounted on a ceramic substrate, 8 mm

× 10 mm × 0.7 mm.

2. Mounted on printed circuit board.

STATIC CHARACTERISTICS

Tj =25 °C.

SYMBOL

PARAMETER

MAX.

UNIT

Rth j-a

from junction to ambient (note 1)

430

K/W

Rth j-a

from junction to ambient (note 2)

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

−IGSS

reverse gate current

−VGS = 15 V; VDS =0

−

1nA

IDSS

drain current

VGS = 0; VDS = 15 V

PMBFJ111

− mA

PMBFJ112

−

PMBFJ113

−

−V

(BR)GSS

gate-source breakdown voltage

−IG =1 µA; VDS =0

− V

−VGS(off)

gate-source cut-off voltage

ID =1 µA; VDS =5 V

PMBFJ111

10 V

PMBFJ112

PMBFJ113

0.5

RDS(on)

drain-source on-resistance

VGS = 0 V; VDS = 0.1 V

PMBFJ111

−

Ω

PMBFJ112

−

PMBFJ113

−

100

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