PMBT6429 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

PMBT6428; PMBT6429

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

IC = 0.1 mA; VCE =5V

PMBT6428

250

650

PMBT6429

500

1250

DC current gain

IC = 1 mA; VCE =5V

PMBT6428

250

−

PMBT6429

500

−

DC current gain

IC = 10 mA; VCE =5V

PMBT6428

250

−

PMBT6429

500

−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−

200

IC = 100 mA; IB =5mA

−

600

VBE

base-emitter voltage

IC = 1 mA; VCE = 5 V

560

660

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

3pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 1 mA; VCE = 5 V; f = 100 MHz

100

700

MHz

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