90

V

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-20

V

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

-0.012

V/°C Reference to 25°C, I D = -1mA

GS = -4.5V, ID = -2.2A ƒ

1

1

40

VGS = -2.7V, ID = -1.8A ƒ

VGS(th)

Gate Threshold Voltage

-0.70

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

4.0

S

VDS = -16V, ID = -2.2A

-1.0

VDS = -16V, VGS = 0V

-25

VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

-100

VGS = -12V

Gate-to-Source Reverse Leakage

100

VGS = 12V

Qg

Total Gate Charge

22

ID = -2.2A

Qgs

Gate-to-Source Charge

3.3

nC

VDS = -16V

Qgd

Gate-to-Drain ("Miller") Charge

9.0

VGS = -4.5V, See Fig. 6 and 12 ƒ

td(on)

Turn-On Delay Time

8.4

VDD = -10V

tr

Rise Time

26

ID = -2.2A

td(off)

Turn-Off Delay Time

51

RG = 6.0Ω

t

Fall Time

33

R = 4.5Ω, See Fig. 10 ƒ

f

D

Between lead tip

and center of die contact

Ciss

Input Capacitance

610

VGS = 0V

Coss

Output Capacitance

310

pF

VDS = -15V

Crss

Reverse Transfer Capacitance

170

ƒ = 1.0MHz, See Fig. 5

Notes:

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

-1.0

V

TJ = 25°C, IS = -1.8A, VGS = 0V ƒ

trr

Reverse Recovery Time

56

84

ns

TJ = 25°C, IF = -2.2A

Qrr

Reverse RecoveryCharge

71

110

nC

di/dt = 100A/µs ƒ

ton

Forward Turn-On Time

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

-17

-2.5

A

IGSS

IDSS

Drain-to-Source Leakage Current

LS

Internal Source Inductance

6.0

LD

Internal Drain Inductance

4.0

nH

ns

nA

µA

Ω

RDS(ON)

Static Drain-to-Source On-Resistance

S

D

G

S

D

G

Rev:2023A2

2

IRF7304

Dual P-Channel MOSFET

m