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IRF7341 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7341 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 7 page  The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Description l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Dynamic dv/dt Rating l Fast Switching l Lead-Free Parameter Max. Units VDS Drain- Source Voltage 55 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.7 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 3.8 A IDM Pulsed Drain Current 38 PD @TC = 25°C Power Dissipation 2.0 PD @TC = 70°C Power Dissipation 1.3 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V EAS Single Pulse Avalanche Energy 72 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance Absolute Maximum Ratings W D1 D1 D2 D2 G1 S2 G2 S1 8 1 2 3 4 5 6 7 ID= 4.7A (VGS=10V) l Features VDS (V) = 55V RDS(ON) 30m (VGS = 10V) l RDS(ON) 45m (VGS = 4.5V) l l IRF7341 Rev:2023A2 1 SOP-8 |
Similar Part No. - IRF7341 |
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Similar Description - IRF7341 |
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