PMBTA13 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 29

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

PMBTA13; PMBTA14

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

100

IEBO

emitter cut-off current

IC = 0; VEB =10V

−

100

hFE

DC current gain

IC = 10 mA; VCE = 5 V; (see Fig.2)

PMBTA13

5000

−

PMBTA14

10000

−

DC current gain

IC = 100 mA; VCE = 5 V; (see Fig.2)

PMBTA13

10000

−

PMBTA14

20000

−

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

−

1.5

VBEon

base-emitter on-state voltage

IC = 100 mA; VCE =5V

−

1.4

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

125

−

MHz

Fig.2 DC current gain; typical values.

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−1

IC (mA)

hFE

102

103

VCE =2V.

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