Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-30

–––

–––

V

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– 0.019 –––

V/°C

Reference to 25°C, ID = -1mA

–––

–––

13.5

VGS = -10V, ID = -11A

‚

–––

–––

22

VGS = -4.5V, ID = -8.8A

‚

VGS(th)

Gate Threshold Voltage

-1.0

–––

-2.5

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

17

–––

–––

S

VDS = -10V, ID = -11A

–––

–––

-15

VDS = -24V, VGS = 0V

–––

–––

-25

VDS = -24V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage

–––

–––

-100

VGS = -20V

Gate-to-Source Reverse Leakage

–––

–––

100

VGS = 20V

Qg

Total Gate Charge

–––

75

110

ID = -11A

Qgs

Gate-to-Source Charge

–––

14

21

nC

VDS = -15V

Qgd

Gate-to-Drain ("Miller") Charge

–––

12

18

VGS = -10V

td(on)

Turn-On Delay Time

–––

15

–––

VDD = -15V

‚

tr

Rise Time

–––

23

–––

ID = -1.0A

td(off)

Turn-Off Delay Time

–––

150

–––

RG = 6.0Ω

tf

Fall Time

–––

76

–––

VGS = -10V

Ciss

Input Capacitance

––– 4030 –––

VGS = 0V

Coss

Output Capacitance

–––

580

–––

pF

VDS = -25V

Crss

Reverse Transfer Capacitance

–––

410

–––

ƒ = 1.0kHz

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)



p-n junction diode.

VSD

Diode Forward Voltage

–––

–––

-1.2

V

TJ = 25°C, IS = -2.5A, VGS = 0V

‚

trr

Reverse Recovery Time

–––

40

60

ns

TJ = 25°C, IF = -2.5A

Qrr

Reverse Recovery Charge

–––

47

71

nC

di/dt = -100A/µs

‚

Source-Drain Ratings and Characteristics

A

-47

–––

–––

–––

-2.5

–––

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

m

Ω

RDS(on)

Static Drain-to-Source On-Resistance

IDSS

Drain-to-Source Leakage Current

nA

ns

ƒ Surface mounted on 1 in square Cu board

Rev:2023A2

2

P-Channel 30 V (D-S) MOSFET

IRF7424