IRF7455 datasheet(1/8 Pages) EVVOSEMI

Part #	IRF7455

Description	MOSFET

PDF	8 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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1 / 8 page

Symbol

Parameter

Typ.

Max.

Units

RθJA

Junction-to-Ambient

50

°C/W

Thermal Resistance

Top View

8

1

2

3

4

5

6

7

D

G

D

S

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-to-Source Voltage

± 12

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

15

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

12

A

IDM

Pulsed Drain Current

120

PD @TA = 25°C

Maximum Power Dissipation

2.5

W

PD @TA = 70°C

Maximum Power Dissipation

1.6

W

Linear Derating Factor

0.02

W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

l High Frequency DC-DC Converters

with Synchronous Rectification

l Lead-Free

Applications

Benefits

l Ultra-Low Gate Impedance

Very Low RDS(on) at 4.5V V GS

Fully Characterized Avalanche Voltage and Current

Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

Starting TJ = 25°C, L = 9.4mH

RG = 25Ω, IAS = 8.0A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t<10 sec

IRF7455

Rev:2023A2

1

l

Features

VDS (V) = 40V

RDS(ON)

7.5m

(VGS = 10V)

l

RDS(ON)

9 m

(VGS = 4.5V)

l

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IRF7455 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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