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IRF7470 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # IRF7470
Description  MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRF7470 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
0.80
1.3
V
TJ = 25°C, IS = 8.0A, VGS = 0V
ƒ
0.65
TJ = 125°C, IS = 8.0A, VGS = 0V
trr
Reverse Recovery Time
72
110
ns
TJ = 25°C, IF = 8.0A, VR= 20V
Qrr
Reverse Recovery Charge
130
200
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
76
110
ns
TJ = 125°C, IF = 8.0A, VR=20V
Qrr
Reverse Recovery Charge
150
230
nC
di/dt = 100A/µs
ƒ
S
D
G
Diode Characteristics
2.3
85
A
VSD
Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
300
mJ
IAR
Avalanche Current

8.0
A
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.04
V/°C
Reference to 25°C, ID = 1mA
9.0
13
VGS = 10V, ID = 10A
„
10
15
m
Ω
VGS = 4.5V, ID = 8.0A
„
VGS(th)
Gate Threshold Voltage
0.8
2.0
V
VDS = VGS, ID = 250µA
20
µA
VDS = 32V, VGS = 0V
100
VDS = 32V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage
200
VGS = 12V
Gate-to-Source Reverse Leakage
-200
nA
VGS = -12V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
27
S
VDS = 20V, ID = 8.0A
Qg
Total Gate Charge
29
44
ID = 8.0A
Qgs
Gate-to-Source Charge
7.9
12
nC
VDS = 20V
Qgd
Gate-to-Drain ("Miller") Charge
8.0
12
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
23
35
VGS = 0V, VDS = 16V
td(on)
Turn-On Delay Time
10
VDD = 20V
tr
Rise Time
1.9
ID = 8.0A
td(off)
Turn-Off Delay Time
21
RG = 1.8Ω
tf
Fall Time
3.2
VGS = 4.5V
ƒ
Ciss
Input Capacitance
3430
VGS = 0V
Coss
Output Capacitance
690
VDS = 20V
Crss
Reverse Transfer Capacitance
41
pF
ƒ = 1.0MHz
Rev:2023A2
2
S
D
G
IRF7470



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