PMSS3904 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 27

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

PMSS3904

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

IE = 0; VCB =30V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

VCE = 1 V; see Fig.2

IC = 0.1 mA

−

IC = 1 mA

−

IC = 10 mA

100

300

IC = 50 mA; note 1

−

IC = 100 mA; note 1

−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB =1mA

−

200

IC = 50 mA; IB = 5 mA; note 1

−

300

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 1 mA

650

850

IC = 50 mA; IB = 5 mA; note 1

−

950

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

4pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 20 V; f = 100 MHz 180

−

MHz

noise ﬁgure

IC = 100 µA; VCE =5V; RS =1kΩ

f = 10 Hz to 15.7 KHz

−

5dB

Switching times (between 10% and 90% levels); see Fig.3

ton

turn-on time

ICon = 10 mA; IBon = 1 mA;

IBoff = − 1 mA; VCC =3V;

VBB = −1.9 V

−

110

delay time

−

rise time

−

toff

turn-off time

−

1200

storage time

−

1000

fall time

−

200

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