PMSS3906 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

PNP switching transistor

PMSS3906

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−50

IE = 0; VCB = −30 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

VCE = −1V

IC = −0.1 mA

−

IC = −1mA

−

IC = −10 mA

100

300

IC = −50 mA; note 1

−

IC = −100 mA; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −1mA

−−250

IC = −50 mA; IB = −5 mA; note 1

−−400

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1mA

−−850

IC = −50 mA; IB = −5 mA; note 1

−−950

collector capacitance

IE =ie = 0; VCB = −5 V; f = 1 MHz

−

4.5

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IE = −10 mA; VCB = −20 V; f = 100 MHz

150

−

MHz

noise ﬁgure

IC = −100 µA; VCE = −5 V; RS =1kΩ;

f = 10 Hz to 15.7 kHz

−

4dB

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = −10 mA; IBon = −1 mA; IBoff =1mA −

100

delay time

−

rise time

−

toff

turn-off time

−

700

storage time

−

600

fall time

−

100

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