PMST5089 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

PMST5088; PMST5089

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

IE = 0; VCB =20V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =3V

−

IC = 0; VEB = 4.5 V

−

100

hFE

DC current gain

VCE =5V

PMST5088

IC = 0.1 mA

300

900

IC = 1 mA

350

−

IC = 10 mA

300

−

DC current gain

VCE =5V

PMST5089

IC = 0.1 mA

400

1200

IC = 1 mA

450

−

IC = 10 mA

400

−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB =1mA

−

500

VBE

base-emitter voltage

IC = 10 mA; VCE =5V

−

800

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

4pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz 100

−

MHz

noise ﬁgure

IC = 100 µA; VCE =5V; RS =1kΩ

f = 10 Hz to 15.7 kHz

PMST5088

−

3dB

PMST5089

−

2dB

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