PMST5401 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 29

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistor

PMST5401

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −120 V

−−50

IE = 0; VCB = −120 V; Tj = 150 °C

−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−50

hFE

DC current gain

VCE = −5 V; (see Fig.2)

IC = −1mA

−

IC = −10 mA

240

IC = −50 mA; note 1

−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −1mA

−−200

IC = −50 mA; IB = −5 mA; note 1

−−500

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1mA

−−1V

IC = −50 mA; IB = −5mA

−−1V

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

6pF

transition frequency

IC = −10 mA; VCE = −10 V; f = 100 MHz 100

300

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ

f = 10 Hz to 15.7 kHz

−

8dB

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