PMST5550 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 29

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

PMST5550; PMST5551

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 100 V

−

100

PMST5550

IE = 0; VCB = 100 V; Tamb = 100 °C

−

100

µA

collector cut-off current

IE = 0; VCB = 120 V

−

PMST5551

IE = 0; VCB = 120 V; Tamb = 100 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

hFE

DC current gain

VCE = 5 V; (see Fig.2)

PMST5550

IC = 1 mA

−

IC = 10 mA

250

IC = 50 mA; note 1

−

DC current gain

VCE = 5 V; (see Fig.2)

PMST5551

IC = 1 mA

−

IC = 10 mA

250

IC = 50 mA; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB =1mA

−

150

collector-emitter saturation

voltage

IC = 50 mA; IB = 5 mA; note 1

PMST5550

−

250

PMST5551

−

200

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB =1mA

−

base-emitter saturation voltage

IC = 50 mA; IB = 5 mA; note 1

PMST5550

−

1.2

PMST5551

−

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

6pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 100

300

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 10 Hz to 15.7 kHz

PMST5551

−

8dB

PMST5550 Datasheet(PDF) 3 Page - NXP Semiconductors

PMST5550 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL