PMSTA56 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

PMSTA55; PMSTA56

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

PMSTA55

−−60

PMSTA56

−−80

VCEO

collector-emitter voltage

open base

PMSTA55

−−60

PMSTA56

−−80

VEBO

emitter-base voltage

open collector

−−4V

collector current (DC)

−−500

ICM

peak collector current

−−500

IBM

peak base current

−−500

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

200

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

PMSTA55

IE = 0; VCB = −60 V

−−100

PMSTA56

IE = 0; VCB = −80 V

−−100

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−500

hFE

DC current gain

IC = −10 mA; VCE = −1V

−

IC = −100 mA; VCE = −1 V; note 1

−

VCEsat

collector-emitter saturation voltage IC = −100 mA; IB = −10 mA

−−250

VBE

base-emitter voltage

IC = −100 mA; VCE = −1 V; note 1

−−1.2

transition frequency

IC = −100 mA; VCE = −1 V; f = 100 MHz 50

−

MHz

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