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STGD5H60DF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STGD5H60DF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2085 eq STGD5H60DF Trench Field-stop IGBT www.iscsemi.com 1 DESCRIPTION · High ruggedness, temperature stable behavior · Very low VCEsat · Very tight parameter distribution · Tight parameter distribution APPLICATIONS · Induction cooker · Microwave ovens ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1400 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC= 25℃ 68 A IC Collector Current-Continuous @ TC= 100℃ 45 A ICM Pulsed Collector Current Note1 200 A PD Power Dissipation @TC=25℃ 246 W TJ Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ |
Similar Part No. - STGD5H60DF |
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Similar Description - STGD5H60DF |
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