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STP20N20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP20N20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1197 eq STP20N20 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 125mΩ(Max)@VGS= 10V APPLICATIONS · Switching · DC-DC Converters · Primary side switch Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 18 A IDM Drain Current-Pulsed 72 A PD Total Dissipation @TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(J-c) Thermal Resistance Junction-to-Case 1.38 ℃ /W 3 2 1 TO-220C Package |
Similar Part No. - STP20N20 |
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Similar Description - STP20N20 |
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