Typical Characteristics

0

2

4

6

8

10

00.5

1

1.522.5

3

Qg, GATE CHARGE (nC)

ID =1.4A

VDS = 10V

15V

20V

0

20

40

60

80

100

120

140

160

180

200

0

5

10

15

20

25

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

VDS, DRAIN-SOURCE VOLTAGE (V)

DC

1s

100ms

100

Ps

RDS(ON) LIMIT

VGS = 10V

SINGLE PULSE

RTJA = 270

oC/W

TA = 25

oC

10ms

1ms

0

1

2

3

4

5

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

RTJA = 270°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

RTJA(t) = r(t) * RTJA

RTJA = 270

oC/W

TJ - TA = P * RTJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDN361

Rev:2023A2

4