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IRLR8726 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRLR8726 Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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4 / 7 page ![]() Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 VDS 100 , Drain-to-Source Voltage (V) 100 1000 10000 Coss Crss Ciss GS = 0V, f = 1 MHZ iss = C , C V C C ds SHORTED C + C gs gd = C rss oss = Cds + C gd gd 0 4 8 12 1620 242832 3640 QG Total Gate Charge (nC) 12 10 8 6 4 2 0 VDS= 24V VDS= 15V ID= 20A 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 TJ = 25°C TJ = 175°C VGS = 0V 0.1 1 10 100 VDS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 0.1 1 10 100 1000 10000 TC= 25°C TJ= 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec Rev:2023A2 4 IRLR8726 N-Channel MOSFET |
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