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SI4401 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # SI4401
Description  P-Channel MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

SI4401 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 36
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VGS - 10 V, ID = - 10.2 A
3007
pF
Output Capacitance
Coss
335
Reverse Transfer Capacitance
Crss
291
Total Gate Charge
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A
64
95
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A
33
50
Gate-Source Charge
Qgs
9.8
Gate-Drain Charge
Qgd
15.7
Gate Resistance
Rg
f = 1 MHz
0.4
2
4
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 4.5 V, Rg = 1 
57
86
ns
Rise Time
tr
50
75
Turn-Off Delay Time
td(off)
40
60
Fall Time
tf
17
26
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 10 V, Rg = 1 
13
20
Rise Time
tr
11
20
Turn-Off Delay Time
td(off)
45
68
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 5.3
A
Pulse Diode Forward Current
ISM
- 50
Body Diode Voltage
VSD
IS = - 8.2 A, VGS 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C
36
54
ns
Body Diode Reverse Recovery Charge
Qrr
41
62
nC
Reverse Recovery Fall Time
ta
20
ns
Reverse Recovery Rise Time
tb
16
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 25
A
Drain-Source On-State Resistancea
RDS(on)
VGS - 4.5 V, ID = - 8.4 A
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 10.2 A
37
S
Dynamicb
Input Capacitance
Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Rev:2023A2
2
m
18
29
SI4401
P-Channel MOSFET



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