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SI9945 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # SI9945
Description  MOSFET
PDF  8 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

SI9945 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
60
V
VDS temperature coefficient
V
DS/TJ
ID = 250 μA
55
mV/°C
VGS(th) temperature coefficient
V
GS(th)/TJ
-6
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1
3
V
VDS = VGS, ID = 5 mA
2.5
Gate-source leakage
IGSS
VDS = 0 V, VGS = 20 V
100
nA
Zero gate voltage drain current
IDSS
VDS = 60 V, VGS = 0 V
1
μA
VDS = 60 V, VGS = 0 V, TJ = 85 °C
10
On-state drain current a
ID(on)
VDS  5 V, VGS = 10 V
20
A
Drain-source on-state resistance a
RDS(on)
VGS = 10 V, ID = 4.3 A
25
36
VGS = 4.5 V, ID = 3.9 A
32
47
Forward transconductance a
gfs
VDS = 15 V, ID = 4.3 A
15
S
Dynamic b
Input capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
665
pF
Output capacitance
Coss
75
Reverse transfer capacitance
Crss
40
Total gate charge
Qg
VDS = 30 V, VGS = 10 V, ID = 4.3 A
13
20
nC
VDS = 30 V, VGS = 4.5 V, ID = 4.3 A
15
25
6
9
Gate-source charge
Qgs
2.3
Gate-drain charge
Qgd
2.6
Gate resistance
Rg
f = 1 MHz
2
Turn-on delay time
td(on)
VDD = 30 V, RL = 8.8 ,
ID  3.4 A, VGEN = 4.5 V, Rg = 1 
ns
Rise time
tr
65
100
Turn-off delay time
td(off)
15
25
Fall time
tf
10
15
Turn-on delay time
td(on)
VDD = 30 V, RL = 8.8 ,
ID  3.4 A, VGEN = 10 V, Rg = 1 
10
15
Rise time
tr
15
25
Turn-off delay time
td(off)
20
30
Fall time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
TC = 25 °C
2.6
A
Pulse diode forward current
ISM
20
Body diode voltage
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
V
Body diode reverse recovery time
trr
IF = 1.7 A, di/dt = 100 A/μs,
TJ = 25 °C
30
60
ns
Body diode reverse recovery charge
Qrr
32
50
nC
Reverse recovery fall time
ta
25
ns
Reverse recovery rise time
tb
5
m
SI9945
Rev:2023A2
2



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