Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

SI9948 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # SI9948
Description  Dual P-Channel MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

SI9948 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  SI9948 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 6Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 7Page - EVER SEMICONDUCTOR CO.,LIMITED SI9948 Datasheet HTML 8Page - EVER SEMICONDUCTOR CO.,LIMITED  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 60
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 31
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
4.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 6.3 A
5
Ω
VGS = - 4.5 V, ID = - 6.2 A
6
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 6.1 A
23
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
1345
pF
Output Capacitance
Coss
210
Reverse Transfer Capacitance
Crss
180
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A
32
50
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A
15
25
Gate-Source Charge
Qgs
4
Gate-Drain Charge
Qgd
7.5
Gate Resistance
Rg
f = 1 MHz
5.8
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
10
15
ns
Rise Time
tr
815
Turn-Off DelayTime
td(off)
45
70
Fall Time
tf
12
25
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
42
70
Rise Time
tr
35
60
Turn-Off DelayTime
td(off)
40
70
Fall Time
tf
16
30
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 4.1
A
Pulse Diode Forward Current
ISM
- 32
Body Diode Voltage
VSD
IS = - 2 A, VGS = 0 V
- 0.75
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
34
60
ns
Body Diode Reverse Recovery Charge
Qrr
22
40
nC
Reverse Recovery Fall Time
ta
11
ns
Reverse Recovery Rise Time
tb
23
4
0
Rev:2023A2
2
m
Dual P-Channel MOSFET
SI9948



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com